Diodes 1N5822 1N-5822 5822 30V 3A Schottky Barrier Rectifier Diode Silicon Junction Diode DO-201AD Package 2 Pin Leads Terminals
Employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.
